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The study on the effects of varying Dopant concentration and Diffusion Time in the design of Silicon Avalanche Diode with minimum Vbr of 120v+20% by simulation98

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The study on the effects of varying Dopant concentration and Diffusion Time in the design of Silicon Avalanche Diode with minimum Vbr of 120v+20% by simulation9106062

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Methodology.pdf3
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Abstract, Acknowledgment.pdf1
Introduction.pdf1
References and appendix.pdf1

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