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The study on the effects of varying Dopant concentration and Diffusion Time in the design of Silicon Avalanche Diode with minimum Vbr of 120v+20% by simulation163

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The study on the effects of varying Dopant concentration and Diffusion Time in the design of Silicon Avalanche Diode with minimum Vbr of 120v+20% by simulation3230340

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Methodology.pdf6
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Abstract, Acknowledgment.pdf4
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Literature review.pdf3
References and appendix.pdf3
Introduction.pdf2

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