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Investigation and Modeling of Boron Diffusion Reduction in Silicon by Flourine Implantation using Numerical Simulation
(Universiti Malaysia Perlis, 2007-05)
With the increased interest in the use of fluorine co-implantation with boron for
boron diffusion reduction in the fabrication of semiconductor devices, it is important to
understand the mechanisms by which fluorine ...
Study of Semi-Recessed LOCOS for Quasi-nanoscale CMOS Device Isolation
(Universiti Malaysia Perlis, 2007-03)
This project is entitled as semi-recessed LOCOS for CMOS device isolation. Local oxidation (LOCOS) technique is a widely used method for device isolation in semiconductor process integration. It is a simple, cheap yet and ...
Microfluidic Poly-Si Electrodes Capacitor ( Fabrication & Testing )
(Universiti Malaysia Perlis, 2007-03)
In this project, I have to design, fabricate and testing a Microfluidic capacitor. The
dielectric insulator is replaced with a dielectric fluid (deionized water) instead of usual solid state materials. The conductive ...
Fabrication Of 50 µm transistor and AlNiAu interconnection process
(Universiti Malaysia Perlis, 2007-03)
Generally process fabrication transistor will starts by cleaning the wafer, formation region drain, D and source, S, get oxide and deposited aluminum as contact with the source, drain and gate. Mask is very important thing ...
The Effect of Power Density on the Surface Layer of Amorphous Thin Film
(Universiti Malaysia Perlis, 2007-03)
The development of amorphous silicon (a-Si) device technology since the advent of the first solar cell in 1974 has been truly spectacular with commercial products such as photocopiers, laser printers, facsimile machines, ...
Improvement of SiGe HBT Design and Technology Performance using Device Simulation
(Universiti Malaysia Perlis, 2007-04)
Simulation of the effect of various design parameters on the performance of the HBT is
essential for obtaining the optimized design. This is based on the requirement for a reliable computation of the HBT performance. ...
Polysilicon Process Development – The Effect Of PECVD Process Parameters On The Film Characteristics
(Universiti Malaysia Perlis, 2007-03)
Thin polycrystalline silicon film has been used in the wide range of applications in
the production of integrated circuits and other electronic products. Traditionally,
polycrystalline silicon is deposited using Low ...
Simulation on Parameter and Characteristics Extraction Between Two Simulation Packages (Synopsys and PSpice)
(Universiti Malaysia Perlis, 2007-03)
The progress of silicon technologies in the last twenty years has traced the path to
the unprecedented revolution of information technologies, which has changed everybody’s
lifestyles. Apparently, this has happened with ...