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Electrical characterization of 0.15µm CMOS Transistor using TSUPREM-4 and MEDICI
(Universiti Malaysia Perlis, 2008-04)
Physical and electrical characteristics of 0.153m Complementary Metal Oxide Semiconductor (CMOS) were studied. Fabrications of the devices were done by
TSUPREM-4 simulator and electrical characteristics extraction will ...
Electrical characterization of 0.13 µm NMOS transistor with Retrograde Well and Halo Implant Structure Respectively
(Universiti Malaysia Perlis, 2008-03)
This project is about the usage of Technology Computer Aided Design (TCAD) in
order to construct NMOS transistor with gate length 0.13 µm. TCAD is use in computer
simulation as process modelling and device operation. ...
Fabrication and simulation of PNP Bipolar transistor based on Spin On Dopant technique and Electrical characterization
(Universiti Malaysia Perlis, 2008-04)
In this project, the fabrication and simulation of pnp transistor was performed.
From fabrication process, the electrical characteristic and sheet resistance of the device was observed by 4 point probe measurement. The ...
The study of the effect of MOS transistor scaling on the critical device parameters
(Universiti Malaysia Perlis, 2007-04)
Since the invention of transistors some 30 years ago, CMOS devices have been scale down aggressively in each technology generations to achieve higher integration density and performance. The device shrinkage allow denser ...