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Electrical characterization of 0.13 µm NMOS transistor with Retrograde Well and Halo Implant Structure Respectively
(Universiti Malaysia Perlis, 2008-03)
This project is about the usage of Technology Computer Aided Design (TCAD) in
order to construct NMOS transistor with gate length 0.13 µm. TCAD is use in computer
simulation as process modelling and device operation. ...
The study of the effect of MOS transistor scaling on the critical device parameters
(Universiti Malaysia Perlis, 2007-04)
Since the invention of transistors some 30 years ago, CMOS devices have been scale down aggressively in each technology generations to achieve higher integration density and performance. The device shrinkage allow denser ...