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Theoretical study, simulation & fabrication of Dry Oxidation in terms of SiO2 layer thickness, resistivity & surface roughness
(Universiti Malaysia Perlis, 2008-04)
Oxidation is a process used in wafer fabrication. The goal of oxidation is to grow
a high quality oxide layer on a silicon substrate. During oxidation a chemical reaction between the oxidants and the silicon atoms produces ...
Preparation of high purity SiO2 from Rice Husk
(Universiti Malaysia Perlis, 2008-04)
A high purity silicon dioxide (97.08%) was obtained by atmosphere thermal decomposition of the acetic acid leached rice husk at 800°C for 15 minutes. Leaching process parameters such as pH of the acid solution, leaching ...
Study of aspect ratio performance on Silicon Oxide wet etching by using Profilometer, AFM and SEM
(Universiti Malaysia Perlis, 2008-03)
A study of aspect ratio performance on silicon oxide is developing to predict the
oxide profile on surface of wafer. The main focus of this project is to perform and
produce a high profile of silicon oxide under profiler ...
Simulation for forming Shallow Trench Isolation in the IC using TCAD tools
(Universiti Malaysia Perlis, 2008-04)
A simulation for forming shallow trench isolation (STI) in the integrated circuit
(IC) is introduced. Firstly, using the Taurus Workbench-tools, the first silicon oxide layer and a silicon nitride layer are formed ...