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Electrical characterization of 0.15µm CMOS Transistor using TSUPREM-4 and MEDICI
(Universiti Malaysia Perlis, 2008-04)
Physical and electrical characteristics of 0.153m Complementary Metal Oxide Semiconductor (CMOS) were studied. Fabrications of the devices were done by
TSUPREM-4 simulator and electrical characteristics extraction will ...
Temperature and energy dependence of diffusion in Solid - Effect of Diffusion Coefficient and Junction Depth
(Universiti Malaysia Perlis, 2008-04)
This project entitled Effect of Diffusion Coefficient and Junction Depth on Variation of Temperature and Energy is carry out to find the effect of the junction depth and the diffusion coefficient and how temperature and ...
Effect of different dielectric materials for Ultrathin Oxide
(Universiti Malaysia Perlis, 2008-04)
This paper I want to describe the reliability study of the effect of different dielectric materials for ultrathin oxide. The alternative high–k gate dielectrics are to provide a substantially thicker (physical thickness) ...
Study on diffusivity of Gallium dopant in Silicon using Spin On Dopant (SOD) technique
(Universiti Malaysia Perlis, 2008-03)
Diffusion and ion implantation are two major processes by which chemical species or dopant are introduced into a semiconductor such as silicon to form the electronic
structure. The diffusion process is a method to control ...
Electrical characterization of 0.13 µm NMOS transistor with Retrograde Well and Halo Implant Structure Respectively
(Universiti Malaysia Perlis, 2008-03)
This project is about the usage of Technology Computer Aided Design (TCAD) in
order to construct NMOS transistor with gate length 0.13 µm. TCAD is use in computer
simulation as process modelling and device operation. ...
Study of the thickness of the Silicon Dioxide on wafer using Dry and Wet Oxidation method
(Universiti Malaysia Perlis, 2008-03)
Studies of the interaction of O2 and O with Si(100) at a fundamental level are reviewed.
Both atomic and molecular chemisorbed species have been found on these surfaces. STM studies have given a great deal of information ...
Analysis of the deposited carbon during Electron Beam Induced Deposition (EBID) in Scanning Electron Microscope using Secondary Ion Mass Spectrometry (SIMS)
(Universiti Malaysia Perlis, 2008-03)
Many experiments on the mechanics of nanostructures require the creation of rigid
clamps at specific locations. In this work, electron beam induced deposition (EBID) has been used to deposit carbon films that are similar ...