Search
Now showing items 1-7 of 7
Electrical characterization of 0.15µm CMOS Transistor using TSUPREM-4 and MEDICI
(Universiti Malaysia Perlis, 2008-04)
Physical and electrical characteristics of 0.153m Complementary Metal Oxide Semiconductor (CMOS) were studied. Fabrications of the devices were done by
TSUPREM-4 simulator and electrical characteristics extraction will ...
The study on the effects of varying Dopant concentration and Diffusion Time in the design of Silicon Avalanche Diode with minimum Vbr of 120v+20% by simulation
(Universiti Malaysia Perlis, 2008-04)
Technology CAD (TCAD) refers to the use of computer simulation to model semiconductor processing and device operation. TCAD has two major functions which are process simulation and device simulation. In this project, ...
Temperature and energy dependence of diffusion in Solid - Effect of Diffusion Coefficient and Junction Depth
(Universiti Malaysia Perlis, 2008-04)
This project entitled Effect of Diffusion Coefficient and Junction Depth on Variation of Temperature and Energy is carry out to find the effect of the junction depth and the diffusion coefficient and how temperature and ...
Study on diffusivity of Gallium dopant in Silicon using Spin On Dopant (SOD) technique
(Universiti Malaysia Perlis, 2008-03)
Diffusion and ion implantation are two major processes by which chemical species or dopant are introduced into a semiconductor such as silicon to form the electronic
structure. The diffusion process is a method to control ...
Design and analysis of low power using Sleepy Stack and Zig-Zag technique
(Universiti Malaysia Perlis, 2008-04)
Now days the design of CMOS becomes greater where the number of transistor in design increased largely. However there are some problem that occurs during the excellent
design and the increasing of transistor where the ...
Analysis of the deposited carbon during Electron Beam Induced Deposition (EBID) in Scanning Electron Microscope using Secondary Ion Mass Spectrometry (SIMS)
(Universiti Malaysia Perlis, 2008-03)
Many experiments on the mechanics of nanostructures require the creation of rigid
clamps at specific locations. In this work, electron beam induced deposition (EBID) has been used to deposit carbon films that are similar ...
Simulation for forming Shallow Trench Isolation in the IC using TCAD tools
(Universiti Malaysia Perlis, 2008-04)
A simulation for forming shallow trench isolation (STI) in the integrated circuit
(IC) is introduced. Firstly, using the Taurus Workbench-tools, the first silicon oxide layer and a silicon nitride layer are formed ...