RF behavior of undoped channel ultra-thin body with ultra-thin BOX MOSFETs
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Date
2012-01Author
Mohd Khairuddin, Md Arshad, Dr.
Mostafa, Emam
Kilchytska, Valeria I., Dr.
Andrieu, François, Dr.
Flandre, Denis, Prof.
Raskin, Jean-Pierre P., Prof.
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RF performance of ultra-thin body with ultra-thin buried oxide (BOX), so-called UTBB, MOSFETs with gate length down to 30 nm is presented. Current gain cut-off frequency f T and maximum oscillation frequency f max of 160 GHz and 143 GHz, respectively, are demonstrated. Based on an accurate extraction of the small-signal equivalent circuit of UTBB MOSFET over a wide frequency range, it is revealed that ground plane (GP) implementation (i.e. highly-doped region underneath the BOX)does not increase the high frequency parasitic capacitances, and thus does not degrade the RF performance of UTBB devices.
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http://ieeexplore.ieee.org/xpl/articleDetails.jsp?reload=true&arnumber=6160155&contentType=Conference+Publicationshttp://dspace.unimap.edu.my/123456789/23994
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