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Modeling of structural properties of hexagonal semiconductors
(Elsevier B.V., 2013)
Bulk modulus of hexagonal structure semiconductors are calculated by using density functional theory (DFT) of full-potential linear augmented plane wave (FP-LAPW) within general gradient approximation (GGA). In this work, ...
Characteristics of nanostructure silicon photodiode using laser assisted etching
(Elsevier B.V., 2013)
We prepared nanostructures silicon photodiode (nPSi) by using laser assisted etching at fixed current density (30 mA/cm2) with different etching wavelengths of laser diode (532, 650 and 810 nm), a (metal/nanostructure ...
Influence of current density on porous silicon characteristics
(Trans Tech Publications, 2013)
Porous silicon structures have been fabricated by electrochemical etching using different current density. From field emission scanning electron microscope images (FE-SEM) it was observed that more uniform distribution of ...
External temperature and pressure effects on thermodynamic properties and mechanical stability of yttrium chalcogenides YX(X=S, Se and Te)
(Elsevier B.V., 2013)
The full potential linearized augmented plane wave method within the framework of density functional theory is employed to investigate the structural, thermodynamic and elastic properties of the yttrium chalcogenides (YX: ...
Alternative-current electrochemical etching of uniform porous silicon for photodetector applications
(Electrochemical Science Group, 2013)
The twining of alternative-current (AC) with electrochemical etching (ECE) to fabricate porous silicon (PS) is studied. The porosity percentage is obtained by gravimetric analysis. The effect of different current densities; ...
Structural and morphological studies of cadmium sulfide nanostructures
(Trans Tech Publications, 2013)
Cadmium sulfide (CdS) nanostructures were prepared with different spin coating speed 1000 and 3000 rpm and molarities of Cd:S to be 1.2 to 0.01 mol/L using sol-gel spin coating technique. It is found that the average grain ...
Structural properties of Sb- and Te-based binary compounds: Spin-orbit effect
(Versita Warsaw and Springer-Verlag Wien, 2013-01)
The band structure of AlSb, GaSb, ZnTe and CdTe is calculated using the empirical pseudopotential method (EPM) coupled with spin-orbit (SO) splitting. We applied our empirical model of bulk modulus with SO effect. It has ...
Morphology, analysis and properties studies of CdS nanostructures under thiourea concentration effect for photovoltaic applications
(Electrochemical Science Group, 2013-08)
CdS nanostructures are prepared by sol-gel spin coating method using different thiourea concentrations. The thiourea concentration effect for CdS nanostructures deposited on quartz substrate is studied. The CdS nanostructures ...
Optoelectronic properties of GaAs and AlAs under temperature effect
(Elsevier GmbH, 2013-08)
An application study of optoelectronic properties as a function of the temperature for GaAs and AlAs according to our model has been presented using empirical pseudopotential method (EPM). The structural phase transition ...
Optical properties of GaN nanostructures for optoelectronic applications
(Elsevier B.V., 2013)
Electrochemical deposition method is used to prepare GaN nanostructure. The morphological studies using scanning electron microscopy (SEM), photoluminescence (PL) the refractive index and optical dielectric constant are ...