Browsing Institute of Nano Electronic Engineering (INEE) (Articles) by Author "Y., Al-Douri"
Now showing items 1-5 of 5
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Calculated optical properties of GaX (X=P, As, Sb) under hydrostatic pressure
Y., Al-Douri; Ali, Hussain Reshak (Springer-Verlag, 2011)The hydrostatic pressure dependence of the principal energy gaps and of the optical properties of GaX (X = P, As and Sb) has been calculated using the full potential-linearized augmented plane wave (FP-LAPW) method. The ... -
Investigated optical and elastic properties of Porous silicon: Theoretical study
Y., Al-Douri; N.M., Ahmed; N., Bouarissa; A, Bouhemadou (Elsevier Ltd., 2011-08)Compatibility between experimental and theoretical works is achieved. Empirical Pseudopotential Method (EPM) is used to calculate the energy gap of Si which is found to be indirect. Features such as refractive index, optical ... -
Investigated optical studies of Si quantum dot
Y., Al-Douri; R., Khenata; A.H., Reshak (Elsevier Ltd., 2011-09)Further study of the quantum dot potential for Si is presented. This potential has been calculated by means of our recent empirical model. The indirect energy gap (Γ-X) is calculated using the full potential-linearized ... -
New optical features to enhance solar cell performance based on porous silicon surfaces
A., Ramizy; Z., Hassan; K., Omar; Y., Al-Douri; M.A., Mahdi (Elsevier B.V., 2011-05)Electrochemical etching is used to fabricate porous silicon (PS) surfaces for both sides of the Si wafer. The effect of PS on performance of Si solar cells is investigated and the reflected mirrors are manipulated to enhance ... -
Stiffness properties of porous silicon nanowires fabricated by electrochemical and laser-induced etching
K., Omar; Y., Al-Douri; A., Ramizy; Z., Hassan (Elsevier Ltd., 2011-08)Nanowires with dimensions of few nanometers were formed on the whole etched surface. The optical analysis of silicon nanostructures was studied. Blue shift luminescence was observed at 660 nm for PS produced by electrochemical ...