Now showing items 1-4 of 4

    • Alternative-current electrochemical etching of uniform porous silicon for photodetector applications 

      Husnen R., Abd; Yarub, Al-Douri, Assoc. Prof. Dr.; Naser Mahmoud, Ahmed, Dr.; Uda, Hashim, Prof. Dr. (Electrochemical Science Group, 2013)
      The twining of alternative-current (AC) with electrochemical etching (ECE) to fabricate porous silicon (PS) is studied. The porosity percentage is obtained by gravimetric analysis. The effect of different current densities; ...
    • Influence of current density on porous silicon characteristics 

      Husnen R., Abd; Naser Mahmoud, Ahmed, Dr.; Yarub, Al-Douri, Assoc. Prof. Dr.; Uda, Hashim, Prof. Dr. (Trans Tech Publications, 2013)
      Porous silicon structures have been fabricated by electrochemical etching using different current density. From field emission scanning electron microscope images (FE-SEM) it was observed that more uniform distribution of ...
    • A Novel AC technique for high quality porous GaN 

      Ainorkhilah, Mahmood; Naser Mahmoud, Ahmed, Dr.; Yuhamdan, Yusof; Yam, Fong Kwong, Dr.; Chuah, Lee Siang, Dr.; Husnen R., Abd; Zainuriah, Hassan (Electrochemical Science Group (ESG), 2013-04)
      In this paper, we report the formation of porous GaN films under a novel alternatingcurrent (sine-wave a.c. (50 Hz)) photo-assisted electrochemical etching (ACPEC) conditions. The ac formed porous GaN with excellent ...
    • ZnO nanorod ultraviolet photodetector on porous silicon substrate 

      Reza, Shabannia; Haslan, Abu Hassan, Prof. Dr.; Hadi Mahmodi, Sheikh Sarmast; Nima, Naderi; Husnen R., Abd (IOP Publishing Ltd, 2013)
      Vertically high-density ZnO nanorods were successfully synthesized on a porous silicon (PS) substrate by chemical bath deposition method. The structural and optical investigations revealed that the ZnO nanorods grown on ...