| dc.contributor.author | Marwa, K. Abood | |
| dc.contributor.author | Evan, T. Salim | |
| dc.contributor.author | Jehan, A. Saimon | |
| dc.contributor.author | Aseel Abdulkreem Hadi | |
| dc.date.accessioned | 2021-12-20T04:56:55Z | |
| dc.date.available | 2021-12-20T04:56:55Z | |
| dc.date.issued | 2021-07 | |
| dc.identifier.citation | International Journal of Nanoelectronics and Materials, vol.14(3), 2021, pages 259-268 | en_US |
| dc.identifier.issn | 1985-5761 (Printed) | |
| dc.identifier.issn | 1997-4434 (Online) | |
| dc.identifier.uri | http://dspace.unimap.edu.my:80/xmlui/handle/123456789/72947 | |
| dc.description | Link to publisher's homepage at http://ijneam.unimap.edu.my | en_US |
| dc.description.abstract | This work presents the effect of NH4OH molarities on the electrical characteristics of Nb2O5 films prepared using the precipitation method. Hall Effect measurements proved the formation of n-type Nb2O5 films. The carrier concentration was found to increase with ammonium hydroxide molarities up to 12mol/L, while the carrier mobility decreased. Resistivity-temperature measurements confirm the semiconductor behaviors of the thin films. It also shows a decrease in the resistivity and activation energy with molarity increasing reaching its minimum value in 12 mol /L then they increased again. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Universiti Malaysia Perlis (UniMAP) | en_US |
| dc.subject.other | Nb2O5 thin films | en_US |
| dc.subject.other | Electrical characteristics | en_US |
| dc.subject.other | Hall effect measurements | en_US |
| dc.subject.other | Resistivity - temperature measurements | en_US |
| dc.title | Electrical conductivity, mobility and carrier concentration in Nb2O5 films: effect of NH4OH molarity | en_US |
| dc.type | Article | en_US |
| dc.identifier.url | http://ijneam.unimap.edu.my | |
| dc.contributor.url | evan_tarq@yahoo.com | en_US |
| dc.contributor.url | 100354@uotechnology.edu.iq. | en_US |
