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dc.contributor.authorMarwa, K. Abood
dc.contributor.authorEvan, T. Salim
dc.contributor.authorJehan, A. Saimon
dc.contributor.authorAseel Abdulkreem Hadi
dc.date.accessioned2021-12-20T04:56:55Z
dc.date.available2021-12-20T04:56:55Z
dc.date.issued2021-07
dc.identifier.citationInternational Journal of Nanoelectronics and Materials, vol.14(3), 2021, pages 259-268en_US
dc.identifier.issn1985-5761 (Printed)
dc.identifier.issn1997-4434 (Online)
dc.identifier.urihttp://dspace.unimap.edu.my:80/xmlui/handle/123456789/72947
dc.descriptionLink to publisher's homepage at http://ijneam.unimap.edu.myen_US
dc.description.abstractThis work presents the effect of NH4OH molarities on the electrical characteristics of Nb2O5 films prepared using the precipitation method. Hall Effect measurements proved the formation of n-type Nb2O5 films. The carrier concentration was found to increase with ammonium hydroxide molarities up to 12mol/L, while the carrier mobility decreased. Resistivity-temperature measurements confirm the semiconductor behaviors of the thin films. It also shows a decrease in the resistivity and activation energy with molarity increasing reaching its minimum value in 12 mol /L then they increased again.en_US
dc.language.isoenen_US
dc.publisherUniversiti Malaysia Perlis (UniMAP)en_US
dc.subject.otherNb2O5 thin filmsen_US
dc.subject.otherElectrical characteristicsen_US
dc.subject.otherHall effect measurementsen_US
dc.subject.otherResistivity - temperature measurementsen_US
dc.titleElectrical conductivity, mobility and carrier concentration in Nb2O5 films: effect of NH4OH molarityen_US
dc.typeArticleen_US
dc.identifier.urlhttp://ijneam.unimap.edu.my
dc.contributor.urlevan_tarq@yahoo.comen_US
dc.contributor.url100354@uotechnology.edu.iq.en_US


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