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    Nanocrystalline diamond electrolyte-gates in field effect transistor for a prolific aptasensing HIV-1 Tat on hydrogen-terminated surface

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    Nanocrystalline Diamond Electrolyte-Gates in Field Effect Transistor.pdf (1.480Mb)
    Date
    2020-04
    Author
    Nurul Atiqah, Ahmad
    Ruslinda, A. Rahim
    Bohuslav, Rezek
    Alexander, Kromka
    Nur Syakimah, Ismail
    Subash Chandra Bose Gopinath
    Tibor, Izak
    Vaclav, Prochazka
    Fatin Nabilah, Mohd Faudzi
    Azrul Syafiq, Zainol Abidin
    Nur Nasyifa, Mohd Maidizn
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    Abstract
    Nanocrystalline diamonds have recently gained great attention to circumvent the current hurdles, with their appealing properties such as high-surface-area to volume ratio, low-background current, wide potential window, biocompatibility, and chemical stability. The nanocrystalline diamonds electrolyte-gated field-effect transistor (NCD-EGFET) can operate directly in solution without involving gate oxides in bringing the hydrogen-tethered moieties and facilitates the p-type surface conductivity. This research investigated on Trans-activator of transcription (Tat) protein; a powerful viral gene activator that plays a pivotal role in the primary stage of the human immunodeficiency virus type 1 (HIV-1) replication. Dose-dependent interactions of HIV-1 Tat on NCD-EGFET-based RNA aptamer sensing surface were monitored and attained the detection down to 10 fM. The linear regression curve with 3σ estimation professed the sensitivity range to be 31.213 mV/log10 [Tat Concentration]M and the limit of detection of 6.18 fM. The selectivity analysis of NCD-EGFET was conducted with different proteins from HIV (Nef and p24) and Bovine Serum Albumin. Furthermore, to practice in the clinical application, HIV-1 Tat was spiked into the human blood serum and it displayed the genuine non-fouling interaction with the aptamer. The attained high-performance signal enhancement with nanocrystalline diamond-biosensing aids to circumvent the issues in the current diagnosis.
    URI
    http://dspace.unimap.edu.my:80/xmlui/handle/123456789/64924
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    • International Journal of Nanoelectronics and Materials (IJNeaM) [336]

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