| dc.contributor.author | Vahid, R. Yazdanpanah | |
| dc.contributor.author | Pouria, Hosseinzadeh | |
| dc.contributor.author | Sattar, Mirzakuchaki | |
| dc.date.accessioned | 2019-10-18T09:10:49Z | |
| dc.date.available | 2019-10-18T09:10:49Z | |
| dc.date.issued | 2019-10 | |
| dc.identifier.citation | International Journal of Nanoelectronics and Materials, vol.12(4), 2019, pages 451-458 | en_US |
| dc.identifier.issn | 1985-5761 (Printed) | |
| dc.identifier.issn | 1997-4434 (Online) | |
| dc.identifier.uri | http://dspace.unimap.edu.my:80/xmlui/handle/123456789/62482 | |
| dc.description | Link to publisher's homepage at http://ijneam.unimap.edu.my | en_US |
| dc.description.abstract | This paper studies the impact of Ga segregation on energy bandgap of Al0.35Ga0.65As/GaAs single quantum well system as a function of growth temperature and growth rate using kinetic model and Empirical Tight Binding method. This work indicates amount of red shift can be expected when the growth temperature changes from 500 oC to 710 oC and expected amount of blue shift ct when growth rate increases from 0.1 ML/s to 1 ML/s because of Ga segregation in Al0.35Ga0.65As/GaAs SQW system. This paper suggests that in order to compensate for the Ga segregation and keep the energy bandgap of Al0.35Ga0.65As/GaAs SQW system at 1.53 eV equivalent to 808 nm wavelength, the authors need to reduce 4 ML of the GaAs QW thickness from ideal case when there is no Ga segregation. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Universiti Malaysia Perlis (UniMAP) | en_US |
| dc.subject | Gallium segregation | en_US |
| dc.subject | Growth temperature | en_US |
| dc.subject | Growth rate | en_US |
| dc.subject | Energy bandgap | en_US |
| dc.subject | Kinetic model | en_US |
| dc.subject | Empirical tight binding method | en_US |
| dc.title | Ga segregation impact on Al0.35Ga0.65As/GaAs SQW energy bandgap | en_US |
| dc.type | Article | en_US |
| dc.contributor.url | yazdanv@iust.ac.ir | en_US |
