| dc.contributor.author | Kamal, Kayed | |
| dc.date.accessioned | 2019-03-06T09:54:07Z | |
| dc.date.available | 2019-03-06T09:54:07Z | |
| dc.date.issued | 2019-01 | |
| dc.identifier.citation | International Journal of Nanoelectronics and Materials, vol.12(1), 2019, pages 19-24 | en_US |
| dc.identifier.issn | 1985-5761 (Printed) | |
| dc.identifier.issn | 1997-4434 (Online) | |
| dc.identifier.uri | http://dspace.unimap.edu.my:80/xmlui/handle/123456789/58783 | |
| dc.description | Link to publisher's homepage at http://ijneam.unimap.edu.my | en_US |
| dc.description.abstract | The structure of amorphous CNX thin films have a variety of chemical bond, and studies on these bonds ratios is very important because these ratios determine the appropriate technical use of these films. Therefore, this paper aim to investigate the relation between the conditions of preparation (deposition pressure) of a-CNx thin films prepared using PLD (Pulsed Laser Deposition) method and the film's structure. Results shown that the deposition pressure variation does not affecting the concentration in the same manner for all bonds in the film. Moreover, the sp2 cluster size and the order degree are related to the numerical value of the deposition pressure. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Universiti Malaysia Perlis (UniMAP) | en_US |
| dc.subject | XPS Spectroscopy | en_US |
| dc.subject | Carbon Nitride | en_US |
| dc.subject | Raman Spectroscopy | en_US |
| dc.subject | Laser | en_US |
| dc.subject | Deposition | en_US |
| dc.title | The Influence of Nitrogen Pressure on the Structure of a-CNx Thin Films Prepared by PLD Method | en_US |
| dc.type | Article | en_US |
| dc.contributor.url | khmk2000@gmail.com | en_US |
