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dc.contributor.authorRajasekaran, S.
dc.contributor.authorSundari, G.
dc.date.accessioned2017-09-28T07:46:54Z
dc.date.available2017-09-28T07:46:54Z
dc.date.issued2017
dc.identifier.citationInternational Journal of Nanoelectronics and Materials, vol.10 (1), 2017, pages 21-28en_US
dc.identifier.issn1985-5761 (Printed)
dc.identifier.issn1997-4434 (Online)
dc.identifier.urihttp://dspace.unimap.edu.my:80/xmlui/handle/123456789/49816
dc.descriptionLink to publisher's homepage at http://ijneam.unimap.edu.my/en_US
dc.description.abstractSingle Electron Transistor (SET) is a nanoelectronic device that operates under the controlled mode of tunnelled individual electrons. In this paper, a comparative analysis was performed employing SET based D-Flip flop with conventional logic D-flip flop. SET is eminent nanoscale devices that have low power dissipation, high speed and performance. The flip flop design was simulated using SIMON simulator and the stability of its operation was analysed applying the Monte-Carlo method that represented stability with low power dissipation and matched the functionality of traditional CMOS devices.en_US
dc.language.isoenen_US
dc.publisherUniversiti Malaysia Perlis (UniMAP)en_US
dc.subjectLogic Circuitsen_US
dc.subjectCoulomb Blockageen_US
dc.subjectNanoelectronicsen_US
dc.subjectSingle Electron Device (SED)en_US
dc.subjectFlip-flopen_US
dc.titleAnalysis of flip flop design using nanoelectronic single electron transistoren_US
dc.typeArticleen_US


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