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dc.contributor.authorAsma, Chadel
dc.contributor.authorBoumdienne, Benyoucef
dc.contributor.authorMeriem, Chadel
dc.date.accessioned2017-07-26T07:02:47Z
dc.date.available2017-07-26T07:02:47Z
dc.date.issued2016
dc.identifier.citationInternational Journal of Nanoelectronics and Materials, vol.9, 2016, pages 103-110en_US
dc.identifier.issn1985-5761 (Printed)
dc.identifier.issn1997-4434 (Online)
dc.identifier.urihttp://dspace.unimap.edu.my:80/xmlui/handle/123456789/49191
dc.descriptionLink to publisher's homepage at http://ijneam.unimap.edu.my/en_US
dc.description.abstractWe used a one-dimensional simulation program solar cell Capacitance Simulator in 1 Dimension (SCAPS-1D) to investigate Copper-Indium-Gallium-Diselenide- (CIGS-) based solar cells properties. CIGS Solar cells, constituted by a pile of thin layers, contain in a particular fine layer called buffer layer cadmium sulfide (CdS) between the absorber (CIGS) and before the contact oxysulfure of zinc (Zn(O,S). The study will focus on the simulation of the characteristics of a photovoltaic module (the open circuit voltage, the short circuit current, the form factor and performance of the cell). The results obtained after optimization of the thickness and doping of the holders of the absorbent layer and the window layer are Voc = 0.92 V, Icc = 38.33 mA/cm², FF = 77.23% and the energy conversion efficiency is 27.51%.en_US
dc.language.isoenen_US
dc.publisherUniversiti Malaysia Perlisen_US
dc.subjectThin film solar cellsen_US
dc.subjectGraded CIGSen_US
dc.subjectGraded Zn (O,S)en_US
dc.subjectThickness optimizationen_US
dc.subjectSCAPS 1-Den_US
dc.titleNumerical analysis of the effect graded Zn (O,S) on the performance of the graded CIGS based solar cells by SCAPS-1Den_US
dc.typeArticleen_US
dc.contributor.urla-chadel@hotmail.com.en_US


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