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dc.contributor.authorHosseini, Ehsan.
dc.date.accessioned2016-04-22T10:53:30Z
dc.date.available2016-04-22T10:53:30Z
dc.date.issued2015
dc.identifier.citationInternational Journal of Nanoelectronics and Materials, vol.8, 2015, pages 91-98en_US
dc.identifier.issn1985-5761 (Printed)
dc.identifier.issn1997-4434 (Online)
dc.identifier.urihttp://dspace.unimap.edu.my:80/xmlui/handle/123456789/41337
dc.descriptionLink to publisher's homepage at http://ijneam.unimap.edu.my/en_US
dc.description.abstractThis research examines the ingredients of Cobalt-60 propagation on the electrical attributes of single-walled carbon nanotube and (G-FETs). The research observes significant variances in the radiation response of instruments depending on their propagation environment, and corroborate under controlled conditions, standard dielectric hardening approaches are useable to carbon nanoelectronics devices.en_US
dc.language.isoenen_US
dc.publisherUniversiti Malaysia Perlisen_US
dc.subjectRadiationen_US
dc.subjectMobilityen_US
dc.subjectField effect transistors (FETs)en_US
dc.titlePropagation effects in carbon nanoelectronicsen_US
dc.typeArticleen_US
dc.contributor.url_Hosseiny.e@gmail.com.en_US


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