| dc.contributor.author | Abbas, T. | |
| dc.contributor.author | Slewa, L. | |
| dc.date.accessioned | 2016-04-22T10:37:29Z | |
| dc.date.available | 2016-04-22T10:37:29Z | |
| dc.date.issued | 2015 | |
| dc.identifier.citation | International Journal of Nanoelectronics and Materials, vol.8 (2), 2015, pages 111-120 | en_US |
| dc.identifier.issn | 1985-5761 (Printed) | |
| dc.identifier.issn | 1997-4434 (Online) | |
| dc.identifier.uri | http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41333 | |
| dc.description | Link to publisher's homepage at http://ijneam.unimap.edu.my/ | en_US |
| dc.description.abstract | In this paper, we have examined different metals (Au, Al, In) Ohmic contacts on spray deposited ZnS thin films. The thermal stability of the contact structures was also examined by annealing process. Specific contact resistance was determined by characterizing the current-voltage relation from transmission line method (TLM) measurement. The electrical characterization shows that the (I-V) characteristics of the (metal/ZnS) contacts are fairly linear up to a certain value of the applied voltage. Except Au, the used metals show excellent Ohmic contact with ZnS films over a wide range of applied voltage. Specific contact resistance of (In/ZnS) films has been found to be of an order of magnitude lower than that of other metals. The lowest specific contact resistance of (5.2875 Ω.cm2) at room temperature for (In/ZnS) was obtained after annealing at (673 K) for 90 min, which confirmed the thermal stability of the contacts. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Universiti Malaysia Perlis | en_US |
| dc.subject | ZnS | en_US |
| dc.subject | Spray Pyrolysis | en_US |
| dc.subject | Characterization | en_US |
| dc.title | Transmission line method (TLM) measurement of (metal/ZnS) contact resistance | en_US |
| dc.type | Article | en_US |
| dc.contributor.url | dr_t_abbas@yahoo.com. | en_US |
