Now showing items 1-8 of 8

    • The alignment of single SWNTs between electrode using dielectrophoresis 

      Low, Foo Wah; Nur Hamidah, Abdul Halim; Uda, Hashim, Prof. Dr.; Mohammad Nuzaihan, Md Nor (Universiti Malaysia Perlis (UniMAP), 2012-06-18)
      This paper presents the development and fabrication of electrical devices based on alignment of carbon nanotubes (CNTs) in single bundle of single-walled carbon nanotubes (sb-SWNTs) using dielectrophoresis (DEP). The Silicon ...
    • Application of e-beam lithography for nanowire development 

      S. Fatimah, Abd Rahman; Uda, Hashim, Prof. Dr.; Mohammad Nuzaihan, Md Nor (Universiti Malaysia Perlis (UniMAP)Centre for Graduate Studies, 2010-10-16)
      Miniaturization and performance improvements are driving the electronics industry to shrink the feature size of semiconductor device. Because of its diffraction limit, conventional photolithography is becoming increasingly ...
    • Design and fabrication of silicon nanowire based sensor 

      Siti Fatimah, Abd Rahman; Nor Azah, Yusof, Prof. Dr.; Uda, Hashim, Prof. Dr.; Mohammad Nuzaihan, Md Nor (Electrochemical Science Group (ESG), 2013)
      This paper reports the process development of silicon nanowires sensor requires both the fabrication of nanoscale diameter wires and standard integration to CMOS process. By using silicon-on-insulator (SOI) wafer as a ...
    • Fabrication of silicon nanowires by electron beam lithography and thermal oxidation size reduction method 

      Mohammad Nuzaihan, Md Nor; Uda, Hashim, Prof. Dr.; Nazwa, Taib; Tijjani Adam, Shuwa (Trans Tech Publications, 2014)
      A simple method for the fabrication of silicon nanowires using Electron Beam Lithography (EBL) combined with thermal oxidation size reduction method is presented. EBL is used to define the initial silicon nanowires of ...
    • Man-2403 resist development for electron beam lithography process 

      Nur Hamidah, Abdul Halim; Uda, Hashim, Prof. Dr.; Mohammad Nuzaihan, Md Nor (Universiti Malaysia Pahang, 2009-06-20)
      Line-width of resist patterns is more susceptible to the developing time than the thickness of the undeveloped resist. This project focused on the development of MaN-2403 resist for e-beam lithography process. The ...
    • Nanowire formation using electron beam lithography 

      Rahman, S. F. A.; Uda, Hashim, Prof. Dr.; Mohammad Nuzaihan, Md Nor; Mohamed Nuri, A. M.; Mohamad Emi Azri, Shohini; Salleh, S. (American Institute of Physics, 2009-06-01)
      Miniaturization and performance improvements are driving the electronics industry to shrink the feature size of semiconductor device. Because of its diffraction limit, conventional photolithography is becoming increasingly ...
    • Negative Pattern Scheme (NPS) design for nanowire formation using scanning electron microscope based electron beam lithography technique 

      Mohammad Nuzaihan, Md Nor; Uda, Hashim, Prof. Dr.; Siti Fatimah, Abdul Rahman; Tijjani Adam, Shuwa (Trans Tech Publications, 2014)
      In this work, we report the used of Negative Pattern Scheme (NPS) by Electron Microscope Based Electron Beam Lithography (EBL) Technique in connection with scanning electron microscope (SEM) for creating extremely fine ...
    • Pattern designed for combination of optical lithography and electron beam lithography 

      S. Fatimah, Abd Rahman; Uda, Hashim, Prof. Dr.; Mohammad Nuzaihan, Md Nor; A. M., Mohamed Nuri; Muhamad Emi Azri, Shohini (Universiti Malaysia Pahang, 2009-06-20)
      In this paper the fabricated pattern of nanometer and micrometer structures created with electron beam lithography (EBL) and optical lithography on silicon on insulator (SOI) material is presented. The resist used to ...