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dc.contributor.authorAli Hussain, Reshak, Prof. Dr.
dc.contributor.authorSaleem Ayaz, Khan
dc.contributor.authorAuluck, Sushil, Dr.
dc.date.accessioned2015-03-24T04:20:39Z
dc.date.available2015-03-24T04:20:39Z
dc.date.issued2014-04
dc.identifier.citationJournal of Materials Chemistry C, vol.2(13), 2014, pages 2346-2352en_US
dc.identifier.issn2050-7534
dc.identifier.urihttp://dspace.unimap.edu.my:80/xmlui/handle/123456789/39295
dc.descriptionLink to publisher's homepage at http://www.rsc.org/en_US
dc.description.abstractThe thermoelectric properties of pristine graphene and H2S adsorbed onto bridge, hollow and top sites of a graphene sheet are investigated using the semi-classical Boltzmann transport theory. The average values of electrical conductivity, thermal conductivity, Seebeck coefficient, figure of merit (ZT) and the average value of the power factor (Pav) are reported and discussed in detail. While pristine graphene is a zero band gap semiconductor, adsorption of H2S onto the bridge site opens up a direct energy gap of about 0.04 eV, adsorption of a H2S molecule onto the top site opens up a gap of 0.3 eV, and adsorption of H2S onto the hollow site makes it metallic. The investigation of ZT and power factor values suggests that a top-site configuration could be a potential candidate for thermoelectric applications in the range 300-600 K.en_US
dc.language.isoenen_US
dc.publisherRoyal Society of Chemistryen_US
dc.subjectThermoelectric applicationen_US
dc.subjectBand-gap semiconductorsen_US
dc.subjectBoltzmann transport theoryen_US
dc.subjectElectrical conductivityen_US
dc.titleThermoelectric properties of a single graphene sheet and its derivativesen_US
dc.typeBooken_US
dc.identifier.urlhttp://pubs.rsc.org/en/Content/ArticleLanding/2014/TC/c3tc32260b
dc.contributor.urlmaalidph@yahoo.co.uken_US
dc.contributor.urlsayaz_usb@yahoo.comen_US
dc.contributor.urlsauluck@gmail.comen_US


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