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dc.contributor.authorMustapha, Hichour
dc.contributor.authorDjamel, Rached
dc.contributor.authorR., Khenata
dc.contributor.authorM. Zouaoui, Rabah
dc.contributor.authorM., Merabet
dc.contributor.authorAli Hussain, Reshak, Prof. Dr.
dc.contributor.authorS., Omran
dc.contributor.authorRashid, Ahmed
dc.date.accessioned2013-07-10T07:27:28Z
dc.date.available2013-07-10T07:27:28Z
dc.date.issued2012-08
dc.identifier.citationJournal of Physics and Chemistry of Solids, vol. 73(8), 2012, pages 975-981en_US
dc.identifier.issn0022-3697
dc.identifier.urihttp://www.sciencedirect.com/science/article/pii/S002236971200131X
dc.identifier.urihttp://dspace.unimap.edu.my/123456789/26559
dc.descriptionLink to publisher's homepage at http://www.elsevier.com/en_US
dc.description.abstractThe structural, elastic and electronic properties of NiTiSn and CoVSn half-Heusler compounds have been calculated using the full-potential linear muffin-tin orbital (FP-LMTO) method. The computed equilibrium lattice constants are in excellent agreement with the available experimental and theoretical data. The elastic constants Cij are calculated using the total energy variation with strain technique. The polycrystalline elastic moduli (namely: the shear modulus, Young's modulus, Poisson's ratio, Lamé's coefficients, sound velocities and the Debye temperature) were derived from the obtained single-crystal elastic constants. The ductility mechanism for the studied compounds is discussed via the elastic constants Cij and their related parameters. The electronic band structure calculations show that the conduction band minimum (CBM) is located at the X point for both compounds, whereas the valence band maximum (VBM) is located at the Г point for NiTiSn and at the L point for CoVSn, resulting in indirect energy band gaps of 0.46 and 0.75 eV for NiTiSn and CoVSn, respectively. The pressure and volume dependences of the energy band gaps have been calculated.en_US
dc.language.isoenen_US
dc.publisherElsevier Ltd.en_US
dc.subjectC. Ab initio calculationsen_US
dc.subjectD. Electronic structureen_US
dc.titleTheoretical investigations of NiTiSn and CoVSn compoundsen_US
dc.typeArticleen_US
dc.contributor.urlrachedj@yahoo.fren_US


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