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Theoretical characteristics of 1.55 μm InN based quantum dot laser
(The International Society for Optical Engineering (SPIE), 2013-08)
The theoretical characteristics of photon emission at 1.55 μm wavelength are presented considering single layer of indium nitride (InN) quantum dots in the active region. The transparency threshold has been obtained at ...
Minimization of open circuit voltage fluctuation of quantum dot based solar cell using InN
(Trans Tech Publications, 2013)
This paper reports the improvement of open circuit voltage stability of solar cell using InN based quantum dot in the active layer of the device structure. We have analyzed theoretically the temperature dependence of the ...