Now showing items 1-3 of 3

    • Application of InN based quantum dot in reducing short circuit current variation of solar cell above room temperature 

      Mohd Abdur Rashid, Dr.; Mohd Fareq, Abd. Malek, Dr.; A.N., Al-Khateeb; Rosli, F.A.; Md. Abdullah, Al Humayun; Nur Hafeizza, Ramly (Trans Tech Publications, 2014-01)
      This paper focuses on the applicability of InN based quantum dot in the active layer of the solar cell to reduce the short circuit current variation above the room temperature. We have investigated numerically the effect ...
    • Minimization of open circuit voltage fluctuation of quantum dot based solar cell using InN 

      Farah Ayuni, Rosli; Mohd Abdur Rashid, Dr.; Mohd Fareq, Abd. Malek, Dr.; Muzaidi, Othman @ Marzuki; Ahmad Zaidi, Abdullah, Engr.; Md. Abdullah, Al Humayun (Trans Tech Publications, 2013)
      This paper reports the improvement of open circuit voltage stability of solar cell using InN based quantum dot in the active layer of the device structure. We have analyzed theoretically the temperature dependence of the ...
    • Theoretical characteristics of 1.55 μm InN based quantum dot laser 

      Md Mottaleb, Hossain; Md. Abdullah, Al Humayun; Ashraful Ghani, Bhuiyan (The International Society for Optical Engineering (SPIE), 2013-08)
      The theoretical characteristics of photon emission at 1.55 μm wavelength are presented considering single layer of indium nitride (InN) quantum dots in the active region. The transparency threshold has been obtained at ...