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An excellent gain flatness 3.0-7.0 GHz CMOS PA for UWB applications
(Institute of Electrical and Elctronics Engineering (IEEE), 2010-09)
This letter presents an excellent gain flatness CMOS power amplifier (PA) for UWB applications at 3.0-7.0 GHz in TSMC 0.18 μm CMOS technology. The UWB PA proposed here employs a current-reused technique to enhance the gain ...