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Interaction relationship analysis of surface roughness on aluminium etched wafer using RIE
(Trans Tech Publications, 2014)
This paper presents the interaction relationships between Tetrafluoromethane (CF₄) gas, Oxygen (O₂) gas, and RF power in response to the surface roughness of an Aluminium deposited wafer after being etched using Reactive ...
Main effects study on plasma etched aluminium metallization
(Trans Tech Publications, 2014-01)
Main effects contributing to the quality of surface roughness on an etched aluminium metallization wafer using Reactive Ion Etching (RIE) was studied. A total of three controllable process variables, with eight sets of ...