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GaN Schottky barrier photodiode on Si (1 1 1) with low-temperature-grown cap layer
(Elsevier B.V., 2009-07)
In this work, GaN films were grown on three-inch silicon substrates by plasma-assisted molecular beam epitaxy (PAMBE) with AlN (about 200 nm) as the buffer layer. Finally, a thin AlN cap layer (50 nm) was grown on the GaN ...
Nano-silver microcavity enhanced UV GaN light emitter
(Inderscience Enterprises Limited, 2009)
We report results of measurements that help to clarify the role of silver in the reflection of UV emission light from GaN. A GaN as an active layer was sandwiched between two silver metal reflectors. GaN layer on sapphire ...