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A simple oxidation technique for quantum dot dimension shrinkage and tunnel barriers generation
(Elsevier B.V., 2007-05)
The tunnel barriers generation and the quantum dot size shrinkage play a significant role in single-electron transistor (SET) fabrication. Because the numerically etch indicators were not found, the technical indicators, ...
Designing of masks for quantum dot single electron transistor fabrication using E-beam nanolithography
(Nano Science and Technology Institute, 2007)
Quantum dot single electron transistor (QD SET) is able to be fabricated through a joint technique of e-beam lithography (EBL), pattern dependent oxidation (PADOX) and high density plasma etching. In this research, we have ...