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UTBB SOI MOSFETs analog figures of merit: Effects of ground plane and asymmetric double-gate regime
(Elsevier Ltd., 2013)
In this work we investigate the effect of ground plane (GP) on analog figures of merit (FoM) of ultra-thin body and thin buried oxide (UTBB) SOI MOSFETs. Based on experimental devices, both n- and p-type GP configurations ...