Now showing items 1-2 of 2

    • 5-11 GHz CMOS PA with 158.9 ± 41 ps group delay and low power using current-reused technique 

      Rohana, Sapawi, Dr.; Sohiful Anuar, Zainol Murad, Dr.; Dayang Azra, Awang Mat (Elsevier GmbH, 2012-11)
      This paper proposes the design of a low group delay and low power ultra-wideband (UWB) power amplifier (PA) in 0.18 μm CMOS technology. The PA design employs two stages cascade with inductive peaking technique to provide ...
    • An excellent gain flatness 3.0-7.0 GHz CMOS PA for UWB applications 

      Sohiful Anuar, Zainol Murad; Pokharel, R. K.; Galal, A. I. A.; Sapawi, R.; Kanaya, H.; Yoshida, K. (Institute of Electrical and Elctronics Engineering (IEEE), 2010-09)
      This letter presents an excellent gain flatness CMOS power amplifier (PA) for UWB applications at 3.0-7.0 GHz in TSMC 0.18 μm CMOS technology. The UWB PA proposed here employs a current-reused technique to enhance the gain ...