Browsing International Journal of Nanoelectronics and Materials (IJNeaM) by Subject "Interface traps and parasitic capacitance"
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Impact of interface traps and parasitic capacitance on gate capacitance of In0.53Ga0.47As-FinFET for sub 14nm technology node
(Universiti Malaysia Perlis (UniMAP), 2019-07)FinFET technology has emerged to be one of the advanced nanoscale devices for Moore’s Law. The presence of several parasitic components in FinFET has significant effect on the device performance for the channel length of ...