Browsing International Journal of Nanoelectronics and Materials (IJNeaM) by Subject "High electron mobility transistors (HEMTs)"

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    • Investigation of plasma induced etch damage/changes in AlGaN/GaN HEMTs 

      A., Ofiare; S., Taking; K., Karami; A., Dhongde; A., Al-Khalidi; E., Wasige (Universiti Malaysia Perlis (UniMAP), 2021-12)
      In this work, we report on the processing and device characteristics of AlGaN/GaN HEMT devices to investigate the effects of silicon dioxide (SiO2) etching using Fluoroform (CHF3) gas prior to gate metal deposition. Three ...