Browsing International Journal of Nanoelectronics and Materials (IJNeaM) by Subject "Etching high electron mobility transistors (HEMTs)"
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The role of selective pattern etching to improve the Ohmic contact resistance and device performance of AlGaN/GaN HEMTs
(Universiti Malaysia Perlis (UniMAP), 2021-12)In this work, we report the processing and DC performance of fabricated AlGaN/GaN HEMT devices using 3 different patterned Ohmic contact structures. The types of Ohmic contact patterns used are horizontal, vertical and ...