Browsing International Journal of Nanoelectronics and Materials (IJNeaM) by Author "F., Salehuddin"
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Design and electrical simulation of a 22nm MOSFET with graphene bilayer channel using Double High-ĸ Metal Gate
Izwanizam, Yahaya; F., Salehuddin; K. E., Kaharudin (Universiti Malaysia Perlis (UniMAP), 2022-04)This paper will discuss the virtual fabrication design process of a 22nm MOSFET bilayer graphene with high-ĸ metal gate (HKMG). Silvaco software's TCAD fabrication tools were utilized, with the Athena simulation module ...