Optical properties of Si quantum dot potential under pressure effect

dc.contributor.author	Yarub, Al - Douri
dc.date.accessioned	2013-01-11T02:43:34Z
dc.date.available	2013-01-11T02:43:34Z
dc.date.issued	2012
dc.identifier.citation	Advanced Materials Research, vol. 545, 2012, pages 32-37	en_US
dc.identifier.issn	1022-6680
dc.identifier.uri	http://www.scientific.net/AMR.545.32
dc.identifier.uri	http://dspace.unimap.edu.my/123456789/22939
dc.description	Link to publisher's homepage at www.ttp.net/	en_US
dc.description.abstract	Further study of the quantum dot potential under hydrostatic pressure for Si is presented. This potential has been calculated by means of our recent empirical model. The indirect energy gap (Γ-X) is calculated using the full potential-linearized augmented plane wave (FP-LAPW) method. The Engel-Vosko generalized gradient approximation (EV-GGA) formalism is used to optimize the corresponding potential for energetic transition and optical properties calculations of Si. The refractive index and transverse effective charge are predicted under pressure effect. The pressure effect is used to test the validity of our model. The results are compared with others and showed reasonable agreement.	en_US
dc.language.iso	en	en_US
dc.publisher	Trans Tech Publications, Switzerland.	en_US
dc.subject	Optical properties	en_US
dc.subject	Pressure effect	en_US
dc.subject	Quantum-dot	en_US
dc.title	Optical properties of Si quantum dot potential under pressure effect	en_US
dc.type	Article	en_US
dc.contributor.url	yarub@unimap.edu.my	en_US