Browsing School of Materials Engineering (Articles) by Subject "Spintronics"
Now showing items 1-4 of 4
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Accounting oxygen vacancy for half-metallicity and magnetism in Fe-doped CeO2 dilute magnetic oxide
(Elsevier B.V., 2013)The present work explores the electronic and magnetic properties of Ce 1-xFexO2 (x = 0.125 and 0.06) with and without oxygen vacancies by full potential linear augmented plane wave method (FPLAPW) based on density functional ... -
Electronic and optical properties of (Al xGa 1-x) 1-yMn yAs single crystal: A new candidate for integrated optical isolators and spintronics
(Springer Science+Business Media, LLC, 2013-01)We have explored the electronic and optical properties of cubic (Al x Ga1-x )1-y Mn y As system using the FP-LAPW method. The unit cell has 64 atoms, so that one manganese (Mn) atom is placed in the position of gallium ... -
Emergence of half metallicity in Cr-doped GaP dilute magnetic semiconductor compound within solubility limit
(Elsevier B.V., 2012-09)The electronic and magnetic properties of Ga 1- xCr xP dilute magnetic semiconductor (DMS) compound for dopant concentration, x = 0.25, 0.125, 0.06 and 0.03 have been investigated using WIEN2k implementation of full potential ... -
Variation of half metallicity and magnetism of Cd₁₋xCrxZ (Z=S, Se and Te) DMS compounds on reducing dilute limit
(Elsevier (Imprint: NORTH-HOLLAND), 2013-04)The electronic and magnetic properties of Cr-doped Cd-Chalcogenides, Cd₁₋xCrxZ (Z=S, Se and Te) for dopant concentration, x=0.25 and 0.125 are presented in order to search new Dilute Magnetic Semiconductor (DMS) compounds ...