Electrical characterization of 0.13 µm NMOS transistor with Retrograde Well and Halo Implant Structure Respectively

Abstract

This project is about the usage of Technology Computer Aided Design (TCAD) in order to construct NMOS transistor with gate length 0.13 µm. TCAD is use in computer simulation as process modelling and device operation. This Final Year Project report discuss about the Synopsys Taurus TCAD in order to develop and simulate the fabrication process and electrical chracteristic for 0.13 µm NMOS transistor in complete process flow. This project also discuss about electrical characteristic for 0.13 µm retrograde well NMOS transistor dan halo implant. The result for this project are analyze and compare between theoritical and experiment. The objectives of this project are to simulate a 0.13 µm NMOS transistor using TCAD and to study the characteristic of conventional NMOS transistor, Retrograde well and Halo implant structure respectively. TSUPREM4 is used for process simulation while MEDICI is used for device simulation. This project methodology starts from a process flow and recipes development. Then the modules in the Taurus Workbench will be written based on the recipes. The process simulation is run by using TSUPREM4. This process will be continuing until we get the expected output. From process simulation, we can obtain the output such as 2D structure, mesh and doping profile for the device. To get the current-voltage characteristic, we need to run the device simulation by using MEDICI. The result obtained is in the form of I-V caracteristic curve. The study of the IV characterization consist of Ids, Vgs, Vds and Vths. All this parameter is study both from I-V caracterization curve and MEDICI parameter extract.