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The study on the effects of varying Dopant concentration and Diffusion Time in the design of Silicon Avalanche Diode with minimum Vbr of 120v+20% by simulation | 104 |
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February 2024 | March 2024 | April 2024 | May 2024 | June 2024 | July 2024 | August 2024 | |
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The study on the effects of varying Dopant concentration and Diffusion Time in the design of Silicon Avalanche Diode with minimum Vbr of 120v+20% by simulation | 1 | 0 | 6 | 0 | 6 | 4 | 4 |
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Methodology.pdf | 3 |
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Introduction.pdf | 1 |
References and appendix.pdf | 1 |
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