Now showing items 1-2 of 2
Nanowire formation for single electron transistor using SEM based Electron Beam Lithography (EBL) technique: Positive tone vs negative tone e-beam resist
(Nano Science and Technology Institute, 2006)
Experimental studies of nanowires formation are carried out by using Scanning Electron Microscope Based Electron Beam Lithography (EBL) Technique with critical dimensions in less than 100nm. In order to complete the design ...
(AFAG Messen & Ausstellungen GmbH, 2007-11-01)
Silicon Nanowires with diameter or width of the order of a nanometer or 10o meter and length of the order of microns propel for a novel research in the construction of atomically controlled periodic systems with reduced ...