Now showing items 1-3 of 3

    • Alternative-current electrochemical etching of uniform porous silicon for photodetector applications 

      Husnen R., Abd; Yarub, Al-Douri, Assoc. Prof. Dr.; Naser Mahmoud, Ahmed, Dr.; Uda, Hashim, Prof. Dr. (Electrochemical Science Group, 2013)
      The twining of alternative-current (AC) with electrochemical etching (ECE) to fabricate porous silicon (PS) is studied. The porosity percentage is obtained by gravimetric analysis. The effect of different current densities; ...
    • Electrode design and planar uniformity of anodically etched small area porous silicon 

      Ahmed, N. M.; Zaliman, Sauli, Prof. Madya; Uda, Hashim, Prof. Dr.; Zul Azhar, Zahid Jamal, Prof. Dr. (American Institute of Physics, 2009-06-01)
      Porous silicon layer microstructure is sensitive to many parameters, which need to be controlled during etching. These include not only anodization time, current density, applied potential and electrolyte composition but ...
    • Influence of current density on porous silicon characteristics 

      Husnen R., Abd; Naser Mahmoud, Ahmed, Dr.; Yarub, Al-Douri, Assoc. Prof. Dr.; Uda, Hashim, Prof. Dr. (Trans Tech Publications, 2013)
      Porous silicon structures have been fabricated by electrochemical etching using different current density. From field emission scanning electron microscope images (FE-SEM) it was observed that more uniform distribution of ...