Now showing items 1-2 of 2

    • Electrode design and planar uniformity of anodically etched small area porous silicon 

      Ahmed, N. M.; Zaliman, Sauli, Prof. Madya; Uda, Hashim, Prof. Dr.; Zul Azhar, Zahid Jamal, Prof. Dr. (American Institute of Physics, 2009-06-01)
      Porous silicon layer microstructure is sensitive to many parameters, which need to be controlled during etching. These include not only anodization time, current density, applied potential and electrolyte composition but ...
    • Pressure effect on Si quantum-dot potential 

      Yarub K. A., Al-Douri; Uda, Hashim, Prof. Dr.; Ahmed, N. M.; Zaliman, Sauli, Prof. Madya (American Institute of Physics, 2009-06-01)
      Application study of the quantum dot potential as a function of hydrostatic pressure for Si has been presented. This study has been calculated by means of our recent model using empirical pseudopotential method. The effect ...