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dc.contributor.authorSaif, Ala'eddin A.
dc.contributor.authorPoopalan, Prabakaran, Assoc. Prof.
dc.date.accessioned2011-06-17T13:32:23Z
dc.date.available2011-06-17T13:32:23Z
dc.date.issued2011-03-15
dc.identifier.citationPhysica B: Condensed Matter, vol. 406(6-7), 2011, pages 1283-1288en_US
dc.identifier.issn0921-4526
dc.identifier.urihttp://www.sciencedirect.com/science/article/pii/S0921452611000408
dc.identifier.urihttp://dspace.unimap.edu.my/123456789/12326
dc.descriptionLink to publisher's homepage at http://www.elsevier.com/en_US
dc.description.abstractPerovskite Ba0.6Sr0.4TiO3 sol–gel thin films with different thicknesses are fabricated as MFM configuration to study the effect of the film thickness on the dielectric relaxation phenomenon and the ionic transport mechanism. The frequency dependent impedance, electric modulus, permittivity and AC conductivity have been investigated in this context. Z plane for all the tested samples shows two regions, corresponding to the bulk mechanism and the distribution of the grain boundaries–electrodes process. Electric modulus versus frequency plots reveal non-Debye relaxation peaks. The observed decrease in both the impedance and permittivity with the increase in film thickness is attributed to the grain size effect. The frequency dependent conductivity plots show three regions of conduction processes, i.e. low-frequency region due to DC conduction, mid-frequency region due to translational hopping motion and high-frequency region due to localized hopping and/or reorientational motion.en_US
dc.language.isoenen_US
dc.publisherElsevier B. V.en_US
dc.subjectBSTen_US
dc.subjectImpedanceen_US
dc.subjectElectric modulusen_US
dc.subjectDielectricen_US
dc.subjectAC conductivityen_US
dc.titleEffect of the film thickness on the impedance behavior of sol-gel Ba 0.6Sr0.4TiO3 thin filmsen_US
dc.typeArticleen_US
dc.contributor.urlalasaif82@hotmail.comen_US
dc.contributor.urlprabakaran@unimap.edu.myen_US


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