Browsing Journal Articles by Subject "Recessed gate"
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DC and microwave characteristics of AlN spacer based Al₀.₃₇Ga₀.₆₃N/GaN HEMT on SiC substrates for high power RF applications
(Universiti Malaysia Perlis (UniMAP), 2017)The DC and RF performance of 30nm gate length enhancement mode (E-mode)AlGaN/AlN/GaN High electron mobility transistor (HEMT) on SiC substrate with heavily doped source and drain region have investigated using Synopsys ...