Browsing Journal Articles by Subject "Quantum dot"
Now showing items 1-12 of 12
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Application of InN based quantum dot in reducing short circuit current variation of solar cell above room temperature
(Trans Tech Publications, 2014-01)This paper focuses on the applicability of InN based quantum dot in the active layer of the solar cell to reduce the short circuit current variation above the room temperature. We have investigated numerically the effect ... -
A comparative study of confined carrier concentration of laser using quantum well and quantum dot in active layer
(Trans Tech Publications, 2013)This paper presents a comparative analysis of the characteristics of confined carrier concentration in the gain medium as well as the carrier concentration at the threshold. We have studied extensively these phenomena by ... -
Designing of masks for quantum dot single electron transistor fabrication using E-beam nanolithography
(Nano Science and Technology Institute, 2007)Quantum dot single electron transistor (QD SET) is able to be fabricated through a joint technique of e-beam lithography (EBL), pattern dependent oxidation (PADOX) and high density plasma etching. In this research, we have ... -
Effect of lattice constant on band-gap energy and optimization and stabilization of high-temperature In xGa 1 -xN quantum-dot lasers
(Springer US, 2012-07)We analyze the effect of the lattice constant on the band-gap energy of In x Ga1−x N and optimize the structure of the device with a separate-confinement heterostructure. To vary the lattice constants, we change the In ... -
Improvement of absorption characteristics of solar cell above room temperature using quantum dot
(Engg Journals Publications, 2013-10)This paper presents a theoretical study on the light absorption characteristics of solar cell. We have analyzed the temperature dependence of the absorption coefficient of light and the percentage of the incident light ... -
Investigated optical studies of Si quantum dot
(Elsevier Ltd., 2011-09)Further study of the quantum dot potential for Si is presented. This potential has been calculated by means of our recent empirical model. The indirect energy gap (Γ-X) is calculated using the full potential-linearized ... -
Minimization of open circuit voltage fluctuation of quantum dot based solar cell using InN
(Trans Tech Publications, 2013)This paper reports the improvement of open circuit voltage stability of solar cell using InN based quantum dot in the active layer of the device structure. We have analyzed theoretically the temperature dependence of the ... -
Reproducibility of silicon single electron quantum dot transistor
(Nano Science and Technology Institute, 2006)In principle, based on the form of tunnel junction, single electron transistor (SET) can be classified into four types, i.e. nanowire SET, quantum dot SET, nanotube SET and point contact SET. Another classification is SET ... -
A simple oxidation technique for quantum dot dimension shrinkage and tunnel barriers generation
(Elsevier B.V., 2007-05)The tunnel barriers generation and the quantum dot size shrinkage play a significant role in single-electron transistor (SET) fabrication. Because the numerically etch indicators were not found, the technical indicators, ... -
Stability analysis of solar cell characteristics above room temperature using indium nitride based quantum dot
(Science Publication, 2013-09)This study represents the improvement of stability of solar cell characteristics above room temperature. We have analyzed theoretically the temperature dependence of three major characteristics of solar cell using Ge and ... -
A systematic dry etching process for profile control of quantum dots and nanoconstrictions
(Elsevier B.V., 2007-08)In essence, quantum dot dimensions and others can be laterally and vertically defined by using either bottom up or top down methods respectively. In fabrication that uses top down method, etch process hold a chief role. ... -
Theoretical characteristics of 1.55 μm InN based quantum dot laser
(The International Society for Optical Engineering (SPIE), 2013-08)The theoretical characteristics of photon emission at 1.55 μm wavelength are presented considering single layer of indium nitride (InN) quantum dots in the active region. The transparency threshold has been obtained at ...