Now showing items 1-4 of 4

    • Effect of Al doping on Band Gap of hexagonal cross section SiNWs 

      Kausar, Sana; Joshi, Shirish; Srivastava, Anurag (Universiti Malaysia Perlis, 2014)
      In this work band structure of hydrogen-passivated, free-standing silicon nanowires, oriented along [111] direction with hexagonal cross section was studied by using density functional theory using GGA approximation. Effect ...
    • Fabrication of polysilicon nanowires using trimming technique 

      Uda, Hashim, Prof. Dr.; Shahrul Aizzam, Ariffin; Tijjani Adam, Shuwa (AENSI Publications, 2012-04)
      Recently most researches are more to scaling down the electronic devices and this fact including component, structure and complexity of electronic devices. These matters also include fabrication of nanowires in certain ...
    • Nanowire formation for single electron transistor using SEM based Electron Beam Lithography (EBL) technique: Positive tone vs negative tone e-beam resist 

      Mohammad Nuzaihan, Md Nor; Uda, Hashim; Nur Hamidah, Abdul Halim; Bajuri, S. N M (Nano Science and Technology Institute, 2006)
      Experimental studies of nanowires formation are carried out by using Scanning Electron Microscope Based Electron Beam Lithography (EBL) Technique with critical dimensions in less than 100nm. In order to complete the design ...
    • A review on the label free nanowire based biosensor 

      Haarindra Prasad, s/o Rajintra Prasat; Uda, Hashim, Prof. Dr. (AENSI Publications, 2012)
      Advancement in nanotechnologies has encourage researchers to conduct studies related to nanowires formation. Studies regarding the types of nanowire based biosensors have been conducted and reported in this papers. Methods ...