Browsing Journal Articles by Subject "InGaN"
Now showing items 1-2 of 2
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Effect of lattice constant on band-gap energy and optimization and stabilization of high-temperature In xGa 1 -xN quantum-dot lasers
(Springer US, 2012-07)We analyze the effect of the lattice constant on the band-gap energy of In x Ga1−x N and optimize the structure of the device with a separate-confinement heterostructure. To vary the lattice constants, we change the In ... -
Numerical Simulation and Comparative Assessment of DG-HEMT Device for High-frequency Application
(Universiti Malaysia Perlis (UniMAP), 2019-01)The main objective of this paper is to investigate the DC and AC performances of GaN/InGaN/GaN Double Gate High Electron Mobility Transistor (DG-HEMT) based on innovative materials III-V in particular III-N materials ...