Browsing School of Microelectronic Engineering (FYP) by Subject "Silicon"
Now showing items 1-20 of 23
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Analysis of the deposited carbon during Electron Beam Induced Deposition (EBID) in Scanning Electron Microscope using Secondary Ion Mass Spectrometry (SIMS)
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-03)Many experiments on the mechanics of nanostructures require the creation of rigid clamps at specific locations. In this work, electron beam induced deposition (EBID) has been used to deposit carbon films that are similar ... -
Design and analysis of low power using Sleepy Stack and Zig-Zag technique
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)Now days the design of CMOS becomes greater where the number of transistor in design increased largely. However there are some problem that occurs during the excellent design and the increasing of transistor where the ... -
Design and simulation of Gallium Arsenide based Schottky diodes for RF applications
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)Today, being the dawn of a new RF technology wave, the requirement of making semiconductor device which have greater speed in performance, which is realized either as a higher maximum frequency of operation or higher logic ... -
The Effect of Power Density on the Surface Layer of Amorphous Thin Film
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2007-03)The development of amorphous silicon (a-Si) device technology since the advent of the first solar cell in 1974 has been truly spectacular with commercial products such as photocopiers, laser printers, facsimile machines, ... -
Electrical characterization of 0.15µm CMOS Transistor using TSUPREM-4 and MEDICI
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)Physical and electrical characteristics of 0.153m Complementary Metal Oxide Semiconductor (CMOS) were studied. Fabrications of the devices were done by TSUPREM-4 simulator and electrical characteristics extraction will ... -
Fabrication Of 50 µm transistor and AlNiAu interconnection process
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2007-03)Generally process fabrication transistor will starts by cleaning the wafer, formation region drain, D and source, S, get oxide and deposited aluminum as contact with the source, drain and gate. Mask is very important thing ... -
Improvement of SiGe HBT Design and Technology Performance using Device Simulation
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2007-04)Simulation of the effect of various design parameters on the performance of the HBT is essential for obtaining the optimized design. This is based on the requirement for a reliable computation of the HBT performance. ... -
Investigation and Modeling of Boron Diffusion Reduction in Silicon by Flourine Implantation using Numerical Simulation
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2007-05)With the increased interest in the use of fluorine co-implantation with boron for boron diffusion reduction in the fabrication of semiconductor devices, it is important to understand the mechanisms by which fluorine ... -
Microfluidic Poly-Si Electrodes Capacitor ( Fabrication & Testing )
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2007-03)In this project, I have to design, fabricate and testing a Microfluidic capacitor. The dielectric insulator is replaced with a dielectric fluid (deionized water) instead of usual solid state materials. The conductive ... -
Optimization of Nitride deposition process using Taguchi method
(Universiti Malaysia PerlisSchool Of Microelectronic Engineering, 2008-04)The process of plasma enhanced chemical vapor deposition silicon nitride film which is used as barrier layer for the doped oxide in premetal dielectric (PMD) application and optimized using Design of Experiment (DOE) ... -
Optimization on oxidation process using 2K factorial design method
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)Silicon technologies progress in the last twenty years has traced the path to the unprecedented revolution of information technologies, which has changed everybody’s lifestyles. With the help of software, the world of ... -
Polysilicon Process Development – The Effect Of PECVD Process Parameters On The Film Characteristics
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2007-03)Thin polycrystalline silicon film has been used in the wide range of applications in the production of integrated circuits and other electronic products. Traditionally, polycrystalline silicon is deposited using Low ... -
Simulation for forming Shallow Trench Isolation in the IC using TCAD tools
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)A simulation for forming shallow trench isolation (STI) in the integrated circuit (IC) is introduced. Firstly, using the Taurus Workbench-tools, the first silicon oxide layer and a silicon nitride layer are formed ... -
Simulation on Parameter and Characteristics Extraction Between Two Simulation Packages (Synopsys and PSpice)
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2007-03)The progress of silicon technologies in the last twenty years has traced the path to the unprecedented revolution of information technologies, which has changed everybody’s lifestyles. Apparently, this has happened with ... -
Simulation, fabrication and electrical characterization of p-Si capacitor design structure
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-03)Technology CAD (TCAD) refers to the use of computer simulation to model semiconductor processing and device operation. TCAD has two major functions which are process simulation and device simulation. It performs the ... -
Single Crystal SiC Capacitive pressure sensor design and analysis using MEMS Pro L-Edit and Samcef Field & Oofelie software
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-03)Single crystal 3C-SiC capacitive pressure sensors are proposed for high-temperature sensing applications. SiC is an attractive material for harsh environment micromachined transducers due to its outstanding electrical, ... -
Study of acceleratin voltage influence the Conical structure during Electron Beam Induced Deposition (EBID)
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-03)Electron beam induced deposition (EBID) is a well established technique for highresolution direct material deposition from the gas phase onto a substrate. A finely focused electron beam of a scanning electron microscope ... -
Study of aspect ratio performance on Silicon Oxide wet etching by using Profilometer, AFM and SEM
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-03)A study of aspect ratio performance on silicon oxide is developing to predict the oxide profile on surface of wafer. The main focus of this project is to perform and produce a high profile of silicon oxide under profiler ... -
Study of Semi-Recessed LOCOS for Quasi-nanoscale CMOS Device Isolation
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2007-03)This project is entitled as semi-recessed LOCOS for CMOS device isolation. Local oxidation (LOCOS) technique is a widely used method for device isolation in semiconductor process integration. It is a simple, cheap yet and ... -
Study on diffusivity of Gallium dopant in Silicon using Spin On Dopant (SOD) technique
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-03)Diffusion and ion implantation are two major processes by which chemical species or dopant are introduced into a semiconductor such as silicon to form the electronic structure. The diffusion process is a method to control ...