Now showing items 1-4 of 4

    • Characterization of Electroless Under Bump Metallurgy for Alsi Bond Pad Composition 

      Norahmad Barzrul Basaruddin (Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2007-03)
      The characterization of electroless under bump metallurgy for AlSi bond pad composition in term of surface morphology and surface roughness was investigated. By using the sample given, the gold layer need to be deposited ...
    • Characterization of Intermetallic Growth in Gold Ballbonds on Aluminum Metallization 

      Lim Moy Fung (Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2007-03)
      The objective of this project is to study the capability of gold wire bonding process by investigating the intermetallic growth between gold ball bonds and aluminum bond pad. The study includes applying thermal storage ...
    • Fabrication Of 50 µm transistor and AlNiAu interconnection process 

      Shaffie Husin (Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2007-03)
      Generally process fabrication transistor will starts by cleaning the wafer, formation region drain, D and source, S, get oxide and deposited aluminum as contact with the source, drain and gate. Mask is very important thing ...
    • Study on diffusivity of Gallium dopant in Silicon using Spin On Dopant (SOD) technique 

      Mohd Rosydi Zakaria (Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-03)
      Diffusion and ion implantation are two major processes by which chemical species or dopant are introduced into a semiconductor such as silicon to form the electronic structure. The diffusion process is a method to control ...