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Now showing items 21-27 of 27
Silicon Nanowires
(AFAG Messen & Ausstellungen GmbH, 2007-11-01)
Silicon Nanowires with diameter or width of the order of a nanometer or 10o meter and length of the order of microns propel for a novel research in the construction of atomically controlled periodic systems with reduced ...
Electrode design and planar uniformity of anodically etched small area porous silicon
(American Institute of Physics, 2009-06-01)
Porous silicon layer microstructure is sensitive to many parameters, which need to be controlled during etching. These include not only anodization time, current density, applied potential and electrolyte composition but ...
MOSFET Technology for Microelectronic Engineering Undergraduate Programme
(Kementerian Pengajian Tinggi Malaysia (KPTM), 2005-09-30)
This project focused on the process development of MOSFET fabrication. Microelectronic fabrication equipment and facilities from the micro fabrication cleanroom laboratory in KUKUM were used for the purposes of this project. ...
A silicon-oxide-silicon vertically separated electrode nanogap device structure
(American Institute of Physics, 2009-06-01)
In this study, we present a simple method to form a nanogap between two silicon contacts separated by a thin oxide gap. We also demonstrate the validity of dielectric spectroscopy results of two wafer samples (different ...
MOS Transistor Mask Design Using SEM Based E-Beam Lithography
(Malaysian Invention & Design Society (MINDS), 2006-05-19)
Electron beam lithography (EBL) is one of the alternative tools in transferring micro and nano circuit patterns from design editor to the substrate. EBL is state-of-the-art technology for micro and even to nano feature ...
CdS film thickness characterization by R.F. magnetron sputtering
(American Institute of Physics, 2009-06-01)
In this work, cadmium sulphide (CdS) target with 99.999% purity was used as a target in RF magnetron sputtering. The sputtering experiment was conducted onto silicon oxide substrates at different temperatures ranging from ...
Nanowire formation using electron beam lithography
(American Institute of Physics, 2009-06-01)
Miniaturization and performance improvements are driving the electronics industry to shrink the feature size of semiconductor device. Because of its diffraction limit, conventional photolithography is becoming increasingly ...