Now showing items 1-2 of 2

    • Extended MASTAR modeling of DIBL in UTB and UTBB SOI MOSFETs 

      Mohd Khairuddin, Md Arshad, Dr.; Raskin, Jean-Pierre, Prof.; Kilchytska, Valeriya, Dr.; Andrieu, François, Dr.; Scheiblin, Pascal; Faynot, O.; Flandre, Denis, Prof. (Institute of Electrical and Electronics Engineers (IEEE), 2012-01)
      This paper analyzes and models the drain-induced barrier lowering (DIBL) for ultrathin silicon body and ultrathin silicon body and thin buried oxide (UTBB) SOI MOSFETs. The channel depth appears as the primary factor in ...
    • RF behavior of undoped channel ultra-thin body with ultra-thin BOX MOSFETs 

      Mohd Khairuddin, Md Arshad, Dr.; Mostafa, Emam; Kilchytska, Valeria I., Dr.; Andrieu, François, Dr.; Flandre, Denis, Prof.; Raskin, Jean-Pierre P., Prof. (Institute of Electrical and Electronics Engineers (IEEE), 2012-01)
      RF performance of ultra-thin body with ultra-thin buried oxide (BOX), so-called UTBB, MOSFETs with gate length down to 30 nm is presented. Current gain cut-off frequency f T and maximum oscillation frequency f max of 160 ...